Comparison ledger
GCA 6300 DSW, Heidelberg Instruments MLA150, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6300 DSWGCA | MLA150Heidelberg Instruments |
|---|---|---|
| OEM | GCA | Heidelberg Instruments |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | 5X g-line wafer stepper | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | g-line | — |
| Family | GCA 6300 DSW | Heidelberg Instruments MLA150 |
| Cited variants | ||
| Specifications | ||
| Tool type | 5X g-line wafer stepper[1] | Mask-less aligner[3] |
| Exposure wavelength | g-line (436 nm)[1] | — |
| Numerical aperture | 0.30 NA[1] | — |
| Reduction ratio | 5:1[1] | — |
| Variable field size | up to 15 mm square[1] | — |
| Minimum feature size | <0.9 µm[1] | about 1 um[3] |
| Wafer accommodation | 3" up to 150 mm; smaller pieces[1] | — |
| Registered alignment | <0.25 µm[1] | — |
| Mask size | 5" x 0.090"-thick masks[1] | — |
| Step and repeat exposure system | laser-controlled stage motion[1] | — |
| Lens | Zeiss lens with 0.30 numerical aperture[1] | — |
| Maximum die size | ~15 mm x 15 mm[2] | — |
| Minimum substrate size | ~10 x 10 mm[2] | 5 x 5 x 0.1 mm[3] |
| Mask plates | 5x5x0.090 inches[2] | — |
| Lens manufacturer | Zeiss (g-line) / Olympus (i-line)[2] | — |
| Lens numerical aperture | 0.30 (g-line)[1] | — |
| Field size | up to 15 mm square (g-line)[1] | — |
| Resolution | <0.9 µm (g-line)[1] | — |
| Alignment accuracy | typically <0.25 µm (g-line)[1] | 500 nm[4] |
| Registration tolerance (global) | max 0.30 µm (i-line)[2] | — |
| Registration tolerance (local, DFAS) | max 0.15 µm (i-line)[2] | — |
| Wafer size | 3" to 150 mm (g-line)[1] | — |
| Light source | 350 W Hg arc lamp (i-line)[2] | 405 nm or 375 nm laser diodes[3] |
| Intensity at wafer | ~180 mW/cm² (i-line)[2] | — |
| Depth of field | 1.2 µm for 0.7 µm process (i-line)[2] | — |
| Stage system | laser-controlled stage motion (g-line)[1] | — |
| Autofocus | yes (i-line)[2] | Real time, pneumatic[3] |
| Exposure type | step and repeat[1] | — |
| Reduction | 5:1[1] | — |
| OEM | — | Heidelberg Instruments GmbH[3] |
| Machine type | — | Mask-Less Aligner[3] |
| Exposure area | — | 150 x 150 mm[3] |
| Top-side alignment | — | Yes[3] |
| Backside alignment | — | Yes[3] |
| Real-time autofocus | — | Yes[3] |
| Layout input formats | — | .gds, .cif, .dxf[3] |
| Maximum substrate size | — | 220 x 220 x 8 mm; 200 x 200 x 12 mm[3] |
| Substrate capacity | — | up to 8" x 8"[4] |
| Exposure time at maximum write speed | — | 9 minutes for 100 x 100 mm2; 16 minutes for 150 x 150 mm2[4] |
| Maximum substrate size (MLA150-1) | — | 220 x 220 x 8 mm[3] |
| Maximum substrate size (MLA150-2) | — | 200 x 200 x 12 mm[3] |
| Minimum feature size (source1) | — | 1 µm[3] |
| Minimum feature size (source2) | — | 600 nm[4] |
| Uniformity | — | < 120 nm[3] |
| Front-side alignment accuracy | — | < 500 nm[3] |
| Back-side alignment accuracy (MLA150-2) | — | < 1000 nm[3] |
| Maximum exposure area | — | 150 x 150 mm[3] |
| 405 nm laser power | — | 8000 mW[3] |
| 375 nm laser power (MLA150-1) | — | 2800 mW[3] |
| 375 nm laser power (MLA150-2) | — | 7200 mW[3] |
| Writing time with 405 nm laser (100 mm wafer, Fast mode) | — | < 9 min[3] |
| Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-1) | — | < 32 min[3] |
| Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-2) | — | < 9 min[3] |
| Exposure time for 100x100 mm² (max write speed) | — | 9 min[4] |
| Exposure time for 150x150 mm² (max write speed) | — | 16 min[4] |
| Substrate size (source2) | — | Up to 8" x 8"[4] |
| Laser wavelengths | — | 405 nm and 375 nm[4] |
| Exposure method | — | Non-contact[4] |
| Data input formats | — | Multiple standards (e.g., GDS, CIF, DXF)[3] |
| Environment control | — | Temperature stabilization, charcoal filters[3] |
| Laser power (405 nm) | — | 8000 mW[3] |
| Laser power (375 nm) - MLA150-1 | — | 2800 mW[3] |
| Laser power (375 nm) - MLA150-2 | — | 7200 mW[3] |
| Write time (100 mm wafer, 405 nm fast mode) | — | < 9 min[3] |
| Write time (100 mm wafer, 375 nm fast mode) - MLA150-1 | — | < 32 min[3] |
| Write time (100 mm wafer, 375 nm fast mode) - MLA150-2 | — | < 9 min[3] |
| Write time (150 x 150 mm) | — | 16 minutes[4] |
| Write time (100 mm wafer typical) | — | about 30min[6] |
| Write time (50 mm x 50 mm) | — | approx. 4 mins[5] |
| Linewidth variation (stitching) | — | ≤100nm[6] |
| Write grid (address unit) - High Quality | — | 40 nm[6] |
| Write grid (address unit) - Fast Mode | — | 100 nm[6] |
| Grayscale capability | — | 8-bit grayscale bitmap or layer-structured DXF[6] |
| High aspect ratio mode | — | Available (reduced NA for thick resists >100µm)[3] |
| Substrate thickness maximum | — | 8 mm (MLA150-1); 12 mm (MLA150-2)[3] |
| Model | — | MLA150[3] |
| Type | — | Mask-less aligner[3] |
| Exposure source | — | 405 nm or 375 nm laser diodes[3] |
| Alignment | — | Top-side and back-side alignment[3] |
| Substrate size | — | Up to 8" x 8"[4] |
| Backside alignment accuracy | — | < 1000 nm[3] |
| Direct-write exposure | — | Exposes the design directly onto a wafer without a photomask[4] |
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