Comparison ledger
EV Group 6200 NT Mask, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6200 NT MaskEV Group | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | EV Group | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 6200 NT Mask | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Wafer/substrate size | up to 200 mm / 8"[1] | — |
| Top side alignment accuracy | ≤ ± 0.5 µm[2] | — |
| Bottom side alignment accuracy | ≤ ± 1.0 µm[2] | — |
| IR alignment accuracy | ≤ ± 2.0 µm[2] | — |
| Exposure source | Mercury light source / UV LED light source[1] | — |
| Exposure modes | Hard, Soft, & Vacuum Contact; Proximity[3] | — |
| Proximity exposure gap range | 0 - 300 µm adjustable via software[3] | — |
| Wafer thickness | 0.1 - 10 mm (Top Side)[3] | — |
| Mask size | up to 9"[2] | — |
| Substrate/wafer size (max) | 200 mm[2] | — |
| Footprint | 1.95 m²[2] | — |
| Height | 2.10 m[2] | — |
| Weight | ~ 980 kg[2] | — |
| Throughput (first print) | 180 wafers per hour[1] | — |
| Throughput (aligned) | 140 wafers per hour[1] | — |
| Wedge compensation | Fully automatic - SW controlled[1] | — |
| Resolution (SmartNIL) | ≤ 40 nm[4] | — |
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