Comparison ledger
EV Group 6200 NT Mask, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6200 NT MaskEV Group | 1505 G 6 ENikon |
|---|---|---|
| OEM | EV Group | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 6200 NT Mask | Nikon 1505 |
| Specifications | ||
| Wafer/substrate size | up to 200 mm / 8"[1] | — |
| Top side alignment accuracy | ≤ ± 0.5 µm[2] | — |
| Bottom side alignment accuracy | ≤ ± 1.0 µm[2] | — |
| IR alignment accuracy | ≤ ± 2.0 µm[2] | — |
| Exposure source | Mercury light source / UV LED light source[1] | — |
| Exposure modes | Hard, Soft, & Vacuum Contact; Proximity[3] | — |
| Proximity exposure gap range | 0 - 300 µm adjustable via software[3] | — |
| Wafer thickness | 0.1 - 10 mm (Top Side)[3] | — |
| Mask size | up to 9"[2] | — |
| Substrate/wafer size (max) | 200 mm[2] | — |
| Footprint | 1.95 m²[2] | — |
| Height | 2.10 m[2] | — |
| Weight | ~ 980 kg[2] | — |
| Throughput (first print) | 180 wafers per hour[1] | — |
| Throughput (aligned) | 140 wafers per hour[1] | — |
| Wedge compensation | Fully automatic - SW controlled[1] | — |
| Resolution (SmartNIL) | ≤ 40 nm[4] | — |
| Configuration | — | 5" reticle[5] |
| Resolution | — | 650 nm[6] |
| Numerical Aperture | — | 0.54[6] |
| Reduction | — | 5x[6] |
| Exposure Field | — | 15 x 15 mm[6] |
| Alignment Accuracy | — | 130 nm[6] |
| Wafer Size | — | 4 inch[5] |
| Light Source | — | g-line[7] |
| Introduction Year | — | 1988[6] |
| NA (Numerical Aperture) | — | 0.54[6] |
| Make | — | Nikon[5] |
| Model | — | 1505 G 6 E[5] |
| Category | — | Stepper[5] |
| Wafer Sizes | — | 4 inch[5] |
| Exposure type | — | g-line[6] |
| NA | — | 0.54[6] |
| Exposure field | — | 9.3 x 18.8 mm[6] |
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