Comparison ledger
CEE 100, Raith EBPG5200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | EBPG5200Raith |
|---|---|---|
| OEM | CEE | Raith |
| Category | Lithography | Lithography |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Raith EBPG5200 |
| Cited variants |
|
|
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[3] | — |
| Programmable programs | 10 programs[3] | — |
| Steps per program | up to 10 steps[3] | — |
| Programmable step parameters | Acceleration, Speed, Time[3] | — |
| Associated document | CEE Model 100CB Spinner.doc[3] | — |
| Wafer size | Up to 6 inches[3] | 6"[5] |
| Programs | 10 programs each with up to 10 steps[3] | — |
| Control parameters | Acceleration, Speed, Time[3] | — |
| Technology | — | Direct write lithography / electron beam lithography[4] |
| Platform | — | Universal plinth platform shared with EBPG5150[4] |
| Stage | — | 6" full travel[4] |
| Column technology | — | EBPG Electron 100 kV[4] |
| Pattern generator | — | 125 MHz[4] |
| Beam current | — | Up to 350 nA[4] |
| Overlay accuracy | — | ≤ 5 nm[4] |
| Minimum feature size | — | Less than 8 nm[4] |
| Acceleration voltages | — | 20, 50 and 100 kV[4] |
| Large field size | — | Continuously variable up to 1 mm at all kVs[4] |
| Sample handling | — | Automatic 2 holder as standard; 10 holder optional[4] |
| Acceleration voltage | — | 100 kV[2] |
| Maximum current | — | 350 nA[2] |
| Mainfield size | — | 1 mm[2] |
| Minimum linewidth | — | <8 nm[2] |
| Beam current range | — | 100 pA to 250 nA[6] |
| Beam step frequency | — | 500 Hz to 125 MHz[6] |
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