Comparison ledger
Canon FPA 3000 i 4, EV Group 101, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | FPA 3000 i 4Canon | 101EV Group |
|---|---|---|
| OEM | Canon | EV Group |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon FPA 3000 | EV Group 101 |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Intensity 6530 ( W/m2 ) LPA – 0.846[2] | — |
| Manufacturer | Canon[2] | — |
| Model | FPA 3000 i 4[2] | 101[6] |
| Wafer size | 6 inch[2] | — |
| Type | Fine Pattern Aligner[1] | — |
| Software version | V4.09A.08[1] | — |
| Reticle size | 6" square t=0.25"[3] | — |
| Reticle material | Quartz[3] | — |
| Pattern material | 2 layer Cr, 3 layer Cr[3] | — |
| Pellicle frame | Pattern Side Only[3] | — |
| Wafer sizes | 4" thru 8" SEMI Standard, JEIDA, Notch / Flat[3] | — |
| Projection magnification | 1/5 X[3] | — |
| Numerical aperture | .45 - .63[3] | — |
| Field size | 22x22 17x26[3] | — |
| Exposure light | Kr F(365nm)[3] | — |
| Light source | 2.0KW Super High Pressure Hg Lamp[3] | — |
| Intensity | 6500 W/m2[3] | — |
| Uniformity | 1.0[4] | — |
| Resolution | <0.35μm[3] | — |
| Depth of focus | >.8μm[3] | — |
| Image field deviation | <.5μm[3] | — |
| Distortion | <±0.05μm[3] | — |
| Reticle rotation accuracy | <±0.01μm on wafer[3] | — |
| Reticle rotation repeatability | <0.02μm) on wafer[3] | — |
| Wafer alignment | <0.06μm mean + 3sigma[3] | — |
| Focus repeatability | <0.10μm (3sigma)[3] | — |
| Leveling repeatability | <7ppm (3sigma)[3] | — |
| Minimum compensation range | >100ppm[3] | — |
| Step accuracy | <0.04μm (3sigma)[3] | — |
| Scaling | <±0.5ppm[3] | — |
| Orthogonality | <±0.5ppm[3] | — |
| Throughput | >83 wafers/hour Φ6", 22mm, 32 shots[3] | — |
| Model year | 1998[4] | — |
| Serial number | 605669[4] | — |
| Illumination source | 365[4] | — |
| Projection ratio | 5:1[4] | — |
| Field | 22 x 22[4] | — |
| Alignment accuracy | 60[4] | — |
| Stage type | ABS[4] | — |
| OEM | — | EV Group[6] |
| Equipment name | — | EVG 101 Spray Coater[6] |
| NEMO ID | — | evgspraycoat[6] |
| Training required | — | EVG 101 Training[6] |
| Training duration | — | 1.50 hours[6] |
| Processing technique | — | Resist Spray Coat (manual)[6] |
| Cleanliness | — | "All"[6] |
| Location | — | SNF Paul G Allen L107 Cleanroom[6] |
| Wafer diameter (substrate size) | — | up to 300 mm[7] |
| Available modules | — | Spin coat / OmniSpray® / develop[7] |
| Wafer handling options | — | Bowed / warped / thin wafer handling, edge handling[7] |
| Dispense options | — | Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[7] |
| Processing technique (at SNF) | — | Resist Spray Coat (manual)[8] |
| Cleanliness group (at SNF) | — | "All"[6] |
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