Waferpedia

Comparison ledger

PAS 5500 100versus1505 G 6 E

ASML PAS 5500 100, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMASMLNikon
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run—1988–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyASML PAS 5500Nikon 1505
Cited variants
  • PAS 5500/150i-line[1]
  • PAS 5500/100D[1]
—
Specifications
ConfigurationLens damage, needs replacement due to water leak[2]5" reticle[3]
Lithography typeStep-and-repeat i-line[1]—
Technology node0.40 µm[1]—
Resolution—650 nm[4]
Numerical Aperture—0.54[4]
Reduction—5x[4]
Exposure Field—15 x 15 mm[4]
Alignment Accuracy—130 nm[4]
Wafer Size—4 inch[3]
Light Source—g-line[5]
Introduction Year—1988[4]
NA (Numerical Aperture)—0.54[4]
Make—Nikon[3]
Model—1505 G 6 E[3]
Category—Stepper[3]
Wafer Sizes—4 inch[3]
Exposure type—g-line[4]
NA—0.54[4]
Exposure field—9.3 x 18.8 mm[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]web.archive.orgweb.archive.org
  5. [5]ece.utoronto.caece.utoronto.ca