Comparison ledger
ASML PAS 2500, Ultratech 1000 Family, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PAS 2500ASML | 1000 FamilyUltratech |
|---|---|---|
| OEM | ASML | Ultratech |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1985– | — |
| Lifecycle | — | — |
| Lifecycle milestones | 1985 Introduction · 1986 Machine year | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML PAS 2500 | Ultratech 1000 Family |
| Cited variants | — | |
| Specifications | ||
| Wafer size (base model) | 5 inches[3] | — |
| Resolution (PAS 2500/10) | 900 nm[1] | — |
| Overlay accuracy (PAS 2500/10) | 250 nm[1] | — |
| Throughput (PAS 2500/10) | 66 wafers per hour (150 mm)[1] | — |
| Wafer size (PAS 2500/40) | 150 mm (6 inches)[2] | — |
| Reticle masking (PAS 2500/40) | Four independent blades; full field of travel[2] | — |
| Alignment system (PAS 2500/40) | Dual automatic through-the-lens using diffraction grating marks directly referenced to reticle alignment system[2] | — |
| Illumination system (PAS 2500/40) | Elliptical mirror and fly's eye integrator[2] | — |
| Position control (PAS 2500/40) | Three axis HP laser interferometer system[2] | — |
| Model | PAS 2500[3] | — |
| Wafer size | 5 inch[3] | — |
| Line width | 900 nanometers[1] | — |
| Layer placement accuracy | 250 nanometers[1] | — |
| Production capacity | 66 wafers of 150 millimeters per hour[1] | — |
| Tool type | — | Photolithography step-and-repeat 1X stepper[4] |
| Optical design | — | Wynne Dyson[4] |
| Magnification | — | 1X[4] |
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