Comparison ledger
Applied Materials xR Leap Ion, Axcelis 200 PCU, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | xR Leap IonApplied Materials | 200 PCUAxcelis |
|---|---|---|
| OEM | Applied Materials | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | Si Wafer | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2000 Vintage |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials xR Leap Ion | Axcelis NV GSD 200 |
| Cited variants | — | |
| Specifications | ||
| Voltage | 205 Vac[3] | 400 V[4] |
| Frequency | 60 Hz, 3 Phase, 5 Wire[3] | 50 Hz[4] |
| Wafer size | Si Wafer[3] | — |
| Gases used | N2, Argon, BF3-cylinder, AsH3(SDS), PH3 (SDS), GeF4-cylinder- All inside an internal gas box[3] | — |
| Wafer Size | 8 inch[3] | — |
| Power Requirements | 205 Vac, 60 Hz, 3 Phase, 5 Wire[3] | — |
| Wafer Wheel Capacity | 17 wafer[3] | — |
| Energy Range | Ultra low energy range (300 eV)[3] | — |
| Number of Vaporizer Sources | 2[3] | — |
| Plasma Flood Gun | Yes[3] | — |
| Gases Used | N2, Argon, BF3 (cylinder), AsH3 (SDS), PH3 (SDS), GeF4 (cylinder)[3] | — |
| Gas Box | Internal gas box[3] | — |
| Automation Software | Advanced Automation Software[3] | — |
| Spare Parts Included | Yes[3] | — |
| Substrate Material | Si Wafer[3] | — |
| P/N | — | SC 4840 A[4] |
| Phase | — | 3 Phase[4] |
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