Waferpedia

Comparison ledger

0041-26723 Bonded AssemblyversusEV 501 Wafer

Applied Materials 0041-26723 Bonded Assembly, EV Group EV 501 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV 501 WaferEV Group
OEMApplied MaterialsEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer size—Capable of thermo compression, fusion or anodic wafer bonding
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0041-26723 Bonded AssemblyEV Group EV 501 Wafer
Specifications
Configuration—Refurbished[1]
Wafer size—Capable of thermo compression, fusion or anodic wafer bonding[1]
Thickness—Max wafer stack thickness 6 mm[1]
Bottom side heater—550°C max. in 1°C steps[1]
Temperature uniformity—± 1,5 %[1]
Bonding capability—Capable of thermo compression, fusion or anodic wafer bonding[1]
Bond chamber—Bond chamber for small pieces up to 150 mm wafers (with correct tooling)[1]
Vacuum pump—Turbo Pump[1]
Power supply—High voltage power supply for anodic bonding (additional tooling may be required)[1]
Electronics—Electronics Rack[1]
Control/software—Computer & Software[1]
Display—LCD Monitor[1]
Pump—Roughing Pump[1]
Manual—Operations Manual[1]
Condition—Refurbished[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]inventory listing