Comparison ledger
Applied Materials 0010 47763, Pfeiffer Alcatel Adixen AMS 200 DRIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Alcatel Adixen AMS 200 DRIEPfeiffer |
|---|---|---|
| OEM | Applied Materials | Pfeiffer |
| Category | Etch | Etch |
| Wafer size | — | Single-Wafer Chamber for Deep Silicon Etch |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Pfeiffer Alcatel Adixen AMS 200 DRIE |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Power | — | 400 V, 50/60 Hz, 3-Phase[4] |
| Electrical Feed | — | 480 VAC to Tool[4] |
| Tool Supply | — | 208 V, 500 A, 3-Phase, 4-Wire[4] |
| Wafer size | — | Single-Wafer Chamber for Deep Silicon Etch[4] |
| Process Gases | — | Ar, O2, N2, C4F8, SF6 & He[4] |
| RF Power | — | 5 kW[4] |
| Platen Power | — | 3 kW[4] |
| Cooling | — | Standalone Chiller[4] |
| Cryogenic Cooling | — | No[4] |
| Turbo Pump | — | Removed / Not Included[4] |
| Roughing Pump | — | Removed / Not Included[4] |
| Trap | — | Removed[4] |
| Foreline | — | Removed[4] |
| Wafer Size | — | 8 inch[4] |
| Auto Load/Unload | — | Yes[4] |
| Robot | — | 1 Robot from cassette to chamber[4] |
| Chamber Type | — | Single-Wafer Chamber[4] |
| Process Type | — | Deep Silicon Etch (DRIE)[4] |
| Vacuum & Air Utilities | — | Yes[4] |
| Additional Spares | — | Yes[4] |
| Spare Trap | — | Available[4] |
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