Comparison ledger
Applied Materials 0010 47763, Lam Research AutoEtch 490 plasma etcher plasma etch semiconductor, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Lam Research AutoEtch 490 plasma etcher plasma etch semiconductor |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | Lam AutoEtch 490 SN1644[1] |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| Category | — | Plasma Etch[1] |
| Original Equipment Manufacturer | — | Lam Research[1] |
| Condition | — | AS IS condition(One chiller, no pump, With ENI OEM 12 RF Generator)[1] |
| Wafer Size | — | 4,5,6 inch capability.[1] |
| Valid Time | — | Subject to prior sale[1] |
| Lead Time | — | Ready to go[1] |
| Warranty | — | No.[1] |
| Refund | — | No.[1] |
| Inspection | — | Against appointment[1] |
| Wafer size | — | Lam AutoEtch 490 Wafer Belt Drive System[1] |
| RF generator | — | ENI OEM 12 RF Generator[1] |
| Chamber type | — | parallel plate[1] |
| Wafer handling | — | cassette to cassette, single wafer[1] |
| Number of gases | — | 5 independent, capacity for 6[1] |
| Coolant | — | Ethylene glycol or deionized water[1] |
| Control processor | — | Z80 microprocessor[5] |
| Polysilicon etch rate (Cl/He) | — | ≥3500 Å/min[6] |
| Polysilicon etch uniformity (3σ) | — | ±15%[6] |
| Polysilicon/profile control | — | 85-90 degrees[6] |
| Isotropic polysilicon etch rate (SF6/He) | — | 6000-12000 Å/min[6] |
| Nitride etch rate (SF6/He sloped) | — | ≥1800 Å/min[6] |
| Nitride etch rate (SF6/He anisotropic) | — | 1000-2000 Å/min[6] |
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