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Comparison ledger

0010 47763versusCentura AP AdvantEdge G 5 Dry

Applied Materials 0010 47763, Applied Materials Centura AP AdvantEdge G 5 Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
OEMApplied MaterialsApplied Materials
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Applied Materials Centura
Specifications
Configuration2nd Source New[1]3 Wire + G Line[4]
TypeMonopolar Dual Heated[2]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
Model0010-47763[1]Centura AP AdvantEdge G 5[4]
OEMApplied Materials[1]Applied Materials[4]
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[2]—
Quantity available (source)1[2]—
Phase—3 Phase[4]
Chamber A Chemicals Gases Used—BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[4]
Chamber B Chemicals Gases Used—BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[4]
Chamber D Chemicals Gases Used—N2, O2, CF4[4]
Equipment type—Dry Etcher[4]
Electrical—3 Phase - 3 Wire[4]
Line—G Line[4]
Frequency—50/60 Hz[4]
Loadport—Standard Loadport[4]
Control system—Server GEM II[4]
Chamber A gases—BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[4]
Chamber B gases—BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[4]
Chamber D gases—N2, O2, CF4[4]
HDD—No HDD[4]
Vintage—2013[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]saulcontrol.comsaulcontrol.com
  3. [3]getspares.comgetspares.com
  4. [4]inventory listing