Comparison ledger
Applied Materials 0010-21246 Part, Hitachi 9300, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-21246 PartApplied Materials | 9300Hitachi |
|---|---|---|
| OEM | Applied Materials | Hitachi |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Hitachi 9300 |
| Specifications | ||
| Manufacturer | — | Hitachi[1] |
| Model | — | 9300[2] |
| Research status | — | Provisional entry; no specifications recorded yet[1] |
| Designation | — | Hitachi S-9300[1] |
| Tool type | — | High-resolution critical dimension scanning electron microscope (CD-SEM)[1] |
| Application | — | Semiconductor wafer metrology[1] |
| Electron source | — | Schottky emission source[3] |
| Accelerating voltage | — | 500V to 1600V, 10V steps[3] |
| Lens system | — | 3-stage electromagnetic lens system with boosting voltage[3] |
| Magnification | — | 1000X to greater than 300,000X[3] |
| Resolution | — | 3nm at 800V[3] |
| Communication interface | — | SECS/GEM[3] |
| Stage configuration | — | Dual XY stages[3] |
| Image processing | — | Hitachi microscale DSP image processing[3] |
| Imaging mode | — | Backscattered electron (BSE) mode functionality[3] |
| Static measurement accuracy | — | 3 sigma 5nm without auto-focus[3] |
| Loading reliability | — | 25 load operations without error on both ports A and B[3] |
| Throughput | — | 28 wafers per hour[3] |
| Auto-addressing accuracy | — | Within ±3.0 µm in both x and y directions[3] |
| Wafer size | — | 200 mm or 300 mm[3] |
| Field of view | — | 1.2mm[3] |
| Probe current | — | 4~24pA[3] |
| Objective aperture | — | 4-opening, click-stop, heated aperture is selectable/adjustable outside the vacuum[3] |
| Scan coil | — | 2-stage electromagnetic deflection[3] |
| Field of view / wafer imaging ability | — | Entire surface of 12 inch wafer[3] |