Waferpedia

Comparison ledger

0010-16392 ESC AssemblyversusPlasmalab 100 ICP-RIE

Applied Materials 0010-16392 ESC Assembly, Oxford Instruments Plasmalab 100 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-16392 ESC AssemblyApplied Materials
Plasmalab 100 ICP-RIEOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-16392 ESC AssemblyOxford Instruments Plasmalab 100
Specifications
OEMApplied Materials[1]—
Model0010-16392[1]—
TypeESC Assembly[1]—
Wafer Size300 mm[2]—
Electrode ConfigurationDual[2]—
Process gases used—H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[3]
Cryo Table w/ operating temp—-150 to 400C[3]
Substrate cooling—using liquid nitrogen (LN2)[3]
Configuration—RF source 300 W, 13.56 MHz[3]
Base pressure—5E-7 Torr[3]
Main Chamber Backing Pump—Adixen ADP 122P Dry pump[3]
Main Chamber Turbo Pump—Adixen ATH 1300 Turbo[3]
Load Lock—Adixen ACP 15G Dry pump[3]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]spwindustrial.comspwindustrial.com
  3. [3]inventory listing