Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Applied Materials Centura AP AdvantEdge G 5 Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | Centura AP AdvantEdge G 5 DryApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Applied Materials Centura |
| Specifications | ||
| OEM | Applied Materials[1] | Applied Materials[3] |
| Model | 0010-16392[1] | Centura AP AdvantEdge G 5[3] |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Phase | — | 3 Phase[3] |
| Configuration | — | 3 Wire + G Line[3] |
| Chamber A Chemicals Gases Used | — | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[3] |
| Chamber B Chemicals Gases Used | — | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[3] |
| Chamber D Chemicals Gases Used | — | N2, O2, CF4[3] |
| Equipment type | — | Dry Etcher[3] |
| Electrical | — | 3 Phase - 3 Wire[3] |
| Line | — | G Line[3] |
| Frequency | — | 50/60 Hz[3] |
| Loadport | — | Standard Loadport[3] |
| Control system | — | Server GEM II[3] |
| Chamber A gases | — | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[3] |
| Chamber B gases | — | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[3] |
| Chamber D gases | — | N2, O2, CF4[3] |
| HDD | — | No HDD[3] |
| Vintage | — | 2013[3] |
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