Comparison ledger
Applied Materials 0010-13622 RF Match for, Oxford Instruments Plasmalab 100, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | Plasmalab 100Oxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | φ2’, φ4’, φ6’, φ8’ single wafer auto transfer |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Oxford Instruments Plasmalab 100 |
| Cited variants | — | |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[5] | Gas Box:[2] |
| Model | 0010-13622[5] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[5] | — |
| Feature | High Efficiency HE RF Match-Bias[5] | — |
| Dry pump | — | Edwards QDP 40[2] |
| System Control | — | HP PC System, Windows XP[2] |
| Voltage | — | 208 VAC, 3 Phase[2] |
| Full Load | — | 25 A[2] |
| Gas 1 | — | MKS 1479 A, 5% SiH4 / N2, 1000 SCCM[2] |
| Gas 2 | — | MKS 1479 A, NH3, 100 SCCM[2] |
| Gas 3 | — | MKS 1179 A, N2, 2000 SCCM[2] |
| Gas 4 | — | MKS 1179 A, N2O, 3000 SCCM[2] |
| Gas 5 | — | MKS 1179 A, ,O2, 300 SCCM[2] |
| Gas 6 | — | MKS 1179 A, Ar, 500 SCCM (TEOS carrier gas)[2] |
| TEOS Thermotank | — | Thermocenter salvis lab[2] |
| Chuck | — | φ202 mm（ φ2’, φ4’, φ6’, φ8’）[2] |
| Shower head | — | φ225 mm[2] |
| RF Generator | — | AE RFX 600 A[2] |
| Match Box | — | OPT AMU Oxford[2] |
| LF Generator | — | AE LF-5[2] |
| Valve | — | VAT 12036-PA 4[2] |
| MKS valve control | — | 253 B[2] |
| Wafer size | — | φ2’, φ4’, φ6’, φ8’ single wafer auto transfer[2] |
| Chuck diameter | — | 202 mm[2] |
| Shower head diameter | — | 225 mm[2] |
| Turbo pump | — | Alcatel ATP 80/100[2] |
| System control | — | HP PC, Windows XP[2] |
| Full load current | — | 25 A[2] |
| Commissioned PECVD films | — | Ammonia free silicon nitride (SiH4-N2), Low stress silicon nitride (SiH4-NH3), Silicon dioxide (SiH4-N2O), Silicon oxynitride (SiH4-N2O-NH3), Amorphous silicon a-Si:N:H[1] |
| Process type | — | PECVD (Plasma-Enhanced Chemical Vapor Deposition)[2] |
| Deposition description | — | Deposition of various thin films via ALD and PECVD[1] |
| Wafer handling | — | φ2', φ4', φ6', φ8' single wafer auto transfer[2] |
| Load lock | — | single automated wafer transfer load lock[3] |
| Chamber configuration | — | one ICP process module connected to a single automated wafer transfer load lock[3] |
| Configured use | — | silicon-based dielectric etching[3] |
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