Comparison ledger
Applied Materials 0010-03485 Magnet Assy, Lam Research Concept Two Speed, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-03485 Magnet AssyApplied Materials | Concept Two SpeedLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-03485 Magnet Assy | Lam Research Concept Two |
| Cited variants | — |
|
| Specifications | ||
| Configuration | WP AL 300mm PVD[2] | 1 Shrink chamber[6] |
| OEM | Applied Materials[2] | — |
| Model | 0010-03485[2] | Concept Two Speed[6] |
| Description | MAGNET ASSY, WP AL 300MM PVD[3] | — |
| Process | PVD[4] | — |
| Wafer size | 300mm[5] | — |
| Version | Spares[5] | — |
| Part Number | 0010-03485[2] | — |
| Manufacturer | Applied Materials[2] | Lam Research[7] |
| Process Type | PVD (Physical Vapor Deposition)[2] | — |
| Application (Material) | Aluminum (AL)[2] | — |
| Wafer Diameter (associated) | 300 mm[2] | — |
| Configuration option | — | Shrink chamber[7] |
| Asset # | — | 68566[6] |
| Make | — | Lam / Novellus[6] |
| Process type | — | Etch chamber[1] |
| Platform | — | Novellus Concept Two platform[1] |
| Voltage | — | 208 VAC[1] |
| Phase | — | 3 phase[1] |
| Frequency | — | 50/60 Hz[1] |
| Type | — | Chamber Only[1] |
| Full load current | — | 21 A[1] |
| Main breaker rating | — | 25 A[1] |
| Largest load | — | 8 A[1] |
| Intended wafer size | — | 8 inch[8] |
| Wafer shape | — | Notch[8] |
| SMIF interface | — | Yes[8] |