Waferpedia

Comparison ledger

0010-03485 Magnet AssyversusZeta 20

Applied Materials 0010-03485 Magnet Assy, KLA Zeta 20, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-03485 Magnet AssyApplied Materials
OEMApplied MaterialsKLA
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-03485 Magnet AssyKLA Zeta 20
Specifications
ConfigurationWP AL 300mm PVD[1]—
OEMApplied Materials[1]—
Model0010-03485[1]—
DescriptionMAGNET ASSY, WP AL 300MM PVD[2]—
ProcessPVD[3]—
Wafer size300mm[4]—
VersionSpares[4]—
Part Number0010-03485[1]—
ManufacturerApplied Materials[1]—
Process TypePVD (Physical Vapor Deposition)[1]—
Application (Material)Aluminum (AL)[1]—
Wafer Diameter (associated)300 mm[1]—
Type—Fully integrated optical profiling microscope[5]
Measurement capability—3D metrology and imaging[5]
Operating mode—Non-contact 3D microscope and surface topography measurement system[5]
Technology—ZDot technology[5]
Optics—Multi-Mode optics[5]
Measurement techniques—White light interferometry, phase shifting interferometry, Nomarski interference contrast microscopy, shearing interferometry, and broadband reflectometry[5]
Film thickness measurement—Transparent film thickness measurement[5]
Applications—Sample review and automated defect inspection[5]
Environment—Supports both R&D and production environments[5]
Measurement range—Step heights from nanometers to millimeters[6]
Surface characterization—Surface roughness measurement for smooth and rough surfaces[6]
Objective lenses—Objective lenses up to 50x[7]
Software functions—Sample mapping, image stitching, and automated feature detection[7]
Sample load mode—Manual sample load[6]
Tool type—Fully integrated optical profiling microscope[5]
Metrology capability—3D metrology and imaging[7]
Measurement technology—ZDot technology[5]
Measurement mode—White light interferometry[5]
Additional measurement techniques—Confocal microscopy, vertical scanning interferometry, phase shifting interferometry, thin film reflectometry, and differential interference contrast imaging[7]
Operating environments—R&D and production environments[5]
Film thickness range—Transparent film thickness from 30nm to 100µm[5]
Defect inspection capability—Capture defects greater than 1µm[5]
Wafer handling—Manual sample load[6]
Maximum objective lens—Up to 50x[7]
Intro year—2007[8]
Sources (8)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]layla-ec.comlayla-ec.com
  4. [4]fabsurplus.comfabsurplus.com
  5. [5]kla.comkla.com
  6. [6]kla.comkla.com
  7. [7]pnf.uchicago.edupnf.uchicago.edu
  8. [8]schaefer-tec.comschaefer-tec.com