Waferpedia

Comparison ledger

0010-03485 Magnet Assyversus600

Applied Materials 0010-03485 Magnet Assy, CHA 600, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-03485 Magnet AssyApplied Materials
600CHA
OEMApplied MaterialsCHA
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-03485 Magnet AssyCHA 600
Specifications
ConfigurationWP AL 300mm PVD[1]—
OEMApplied Materials[1]—
Model0010-03485[1]—
DescriptionMAGNET ASSY, WP AL 300MM PVD[2]—
ProcessPVD[3]—
Wafer size300mm[4]—
VersionSpares[4]—
Part Number0010-03485[1]—
ManufacturerApplied Materials[1]—
Process TypePVD (Physical Vapor Deposition)[1]—
Application (Material)Aluminum (AL)[1]—
Wafer Diameter (associated)300 mm[1]—
System type—High vacuum deposition system[5]
Baseplate—Typically 20 inches; accommodates up to 15 feedthroughs for instrumentation, control and rotary motion[5]
Bell jar—Most often 19.5" diameter bell jar[5]
Fixture capacity—Planetary Fixturing having a capacity of 18 4" wafers[5]
Pumpdown time—Average pumpdown time of less than 30 minutes[5]
Throughput—In excess of 54 wafers per hour[5]
Ultimate vacuum—10^-8 torr range[5]
Cryogenic pump—8"[5]
Mechanical pump—23-57 CFM, dual stage[5]
Cold trap—2.5 liter capacity, 200 sq. inches of surface area, 10 hours holding time[5]
Water baffle—Optically dense, chevron baffle[5]
High vacuum valve—7-3/4" I.D., seals vertically[5]
Foreline/Roughing valves—3" I.D.[5]
Valve actuation—Electro-pneumatic (all vacuum valves)[5]
Valve sequencing—Manual and automatic (Auto-Tech II)[5]
Ionization gauge control—Dual ionization gauge tube, auto ranging with dual convectron positions[5]
Dimensions—79"H x 43"W x 37"D[5]
Weight—1,200 pounds[5]
Electrical utility—208/10/70A/4-wire connection with ground (3 phase, 5-wire also available)[5]
Water utility—10 GPM (minimum)[5]
Air utility—90-110 PSIG[5]
Optional diffusion pump—2400 liter/second, 6" normal[5]
Process chamber option—19.5" diameter x 30" H, ambient or water-cooled (larger bell jars available)[5]
Baseplate options—20" or 26" diameter, 7-3/4" pumping port[5]
Substrate heat—2-10 kW[5]
Deposition sources—Any commercially available source, including single and multiple beam, CHA's resistance and sputtering sources[5]
Deposition capability (SEC-600)—E-Beam Evaporator available for users to evaporate their own metal sources[6]
Approved deposition materials (SEC-600)—Al, Au, Ag, Cu, Cr, Ge, Ni, Mo, Pd, Pt, Ti and others on case-by-case basis[6]
Substrate size capacity (SEC-600)—Small samples through 100 mm wafers[6]
Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]layla-ec.comlayla-ec.com
  4. [4]fabsurplus.comfabsurplus.com
  5. [5]chaindustries.comchaindustries.com
  6. [6]hmntl.illinois.eduhmntl.illinois.edu