Comparison ledger
ABM -407B-2-S-CE-S293 Robot, Canon MPA 600 FA, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MPA 600 FACanon | |
|---|---|---|
| OEM | ABM | Canon |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-2-S-CE-S293 Robot | Canon MPA 600 |
| Specifications | ||
| Model | ABM-407B-2-S-CE-S293[1] | — |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Configuration | — | Upgraded to 150 mm compatibility[2] |
| Type | — | 1X mirror projection auto feeder / mask aligner[3] |
| Auto feeder | — | Single or double, cassette to cassette, backside wafer handling[3] |
| Wafer sizes | — | 4 inch, 5 inch, 6 inch[3] |
| Mask sizes | — | 5 inch, 6 inch, 7 inch[3] |
| Resolution | — | 1.5 um (using positive resist)[3] |
| Illumination | — | 2 kW high pressure mercury lamp[3] |
| Wavelengths used | — | 365 nm (i-line), 405 nm (h-line), 436 nm (g-line)[3] |
| Intensity | — | At 1800 watts power output: 4 inch wafer more than 700 mW, 5 inch wafer more than 650 mW, 6 inch wafer more than 600 mW[3] |
| Intensity / exposure uniformity | — | Within plus/minus 3%[3] |
| Constant temperature control | — | Monitors and controls system temperature within plus/minus 0.3 degrees C[3] |
| Distortion control | — | PDC matic distortion control[3] |
| Automatic alignment | — | HeNe 633 nm laser beam scanning alignment[3] |
| Alignment modes | — | Spot beam / sheet beam[3] |
| Alignment accuracy | — | 3sigma <= 0.54 um[3] |
| Required facilities | — | 200 VAC, 3Phase, 6 kVA, 50/60Hz; Air Supply(CTC): 200 VAC, 3Phase, 8 kVA, 50/60Hz; CDA pressure minimum 6.5 kg/cm2, flow rate 130 lit/min; Vacuum 50 cmHg or more; Exhaust flow for illuminator 6.5 m/sec to 9.5 m/sec[3] |
| Compatibility upgrade | — | Upgraded to 150 mm compatibility[4] |
| Monitor | — | Monitor not included[4] |
| Vintage | — | 1991 vintage[4] |
| Wafer handling | — | Single or double, cassette to cassette, backside wafer handling[4] |
| Tool type | — | 1X mirror projection mask aligner[4] |
| Temperature control | — | Monitors and controls system temperature within plus/minus 0.3 degrees C[4] |
| Power / electrical | — | 200 VAC, 3Phase, 6 kVA, 50/60Hz[4] |
| Air supply (CTC) | — | 200 VAC, 3Phase, 8 kVA, 50/60Hz[4] |
| CDA pressure | — | Minimum 6.5 kg/cm2, flow rate 130 lit/min[4] |
| Vacuum | — | 50 cmHg or more[4] |
| Exhaust flow for illuminator | — | 6.5 m/sec to 9.5 m/sec[4] |